5.7.1 Gate Current, IG

5.7.1 Gate Current, IG

Based on the lucky electron model, electrons acquire enough energy from the electric field in the channel to surmount the SiSiO2 barrier. Once the required energy to surmount the barrier has been obtained the electrons are redirected towards the SiSiO2 interface by some from of phonon scattering [17, 21].

These electrons, which surmount the SiSiO2 barrier, are injected into the oxide causing gate current, IG [21].

5.8 Fixed Oxide charge (Qf, Nf)

Fixed Charge is a positive charge in the oxide layer less than 2nm from the SiSiO2 interface. This charge is not in electrical communication with underlying charge. It is also assumed to be unchanged by gate bias [22]. Typically, a value of 1.82x10 10 eV 1 cm 2 is representative for the interface charge found in ultrathin oxide silicon MOS devices.